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| SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop - Server D TO-252 Drain Connected to Tab G D S G Top View S N-Channel MOSFET Ordering Information: SUD50N02-09P SUD50N02-09P--E3 (Lead Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TA = 25_C TC = 25_C TA = 25_C TC= 100_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 20 "20 20 14 100 4.3 29 42 6.5a 39.5 -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. b. Limited by package Document Number: 72034 S-41168--Rev. C, 14-Jun-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 19 40 3.1 Maximum 23 50 3.8 Unit _C/W C/W 1 SUD50N02-09P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 20 A 15 0.0135 50 0.008 0.0095 0.014 0.017 S W 20 0.8 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 10 V, RL = 0.2 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 1.6 VDS = 10 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 10 V, f = 1 MHz 1300 470 275 10.5 4.2 4.0 4.0 8 10 25 12 6 12 15 40 20 ns W 16 nC p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 50 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 35 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 6 V 80 I D - Drain Current (A) 5V I D - Drain Current (A) 80 25_C 60 125_C 40 100 TC = -55_C Transfer Characteristics 60 4V 40 20 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 20 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72034 S-41168--Rev. C, 14-Jun-04 2 SUD50N02-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 60 TC = -55_C 25_C 125_C r DS(on)- On-Resistance ( W ) 50 g fs - Transconductance (S) 40 30 20 10 0 0 10 20 30 40 50 0.025 VGS = 4.5 V 0.020 0.015 0.010 0.005 0.000 0 20 40 60 80 100 VGS = 10 V 0.030 On-Resistance vs. Drain Current ID - Drain Current (A) 2000 ID - Drain Current (A) 10 VDS = 10 V ID = 50 A Capacitance Gate Charge 1600 C - Capacitance (pF) Ciss 1200 V GS - Gate-to-Source Voltage (V) 8 6 800 Coss 400 Crss 0 0 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) 4 2 0 0 4 8 12 16 20 Qg - Total Gate Charge (nC) 1.8 1.6 rDS(on) - On-Resiistance (Normalized) 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature 100 VGS = 10 V ID = 30 A I S - Source Current (A) Source-Drain Diode Forward Voltage TJ = 150_C 10 TJ = 25_C -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72034 S-41168--Rev. C, 14-Jun-04 www.vishay.com 3 SUD50N02-09P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 25 1000 Limited by rDS(on) 100 I D - Drain Current (A) Safe Operating Area 20 I D - Drain Current (A) 10, 100 ms 1 ms 10 ms 100 ms 1s 10 s 100 s dc 15 10 10 1 5 0.1 TA = 25_C Single Pulse 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72034 S-41168--Rev. C, 14-Jun-04 |
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